概述
光电探测器由6芯片光电二极管组成。这些二极管采用平面工艺技术制造。光电二极管用氮化硅进行了钝化处理，氮化硅用作抗反射层。二极管被粘合到印刷电路板上，由透明环氧胶提供保护。二极管阵列可以光电或光电导模式工作。
特性
- 高响应度
- 低电容
- 高可靠性
- 峰值波长达830 nm
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