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Photodiode Array PA2100

Photodiode Array PA2100

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The photosensor consists of 6-chip photodiodes produced in planar technology. The photodiodes are passivated with silicon-nitride which acts as an antireflective layer. They are then bonded to the PCB and protected with transparent epoxy glue. The Array can be used in photovoltaic or photoconductive mode.


The PA2100 is available in four different options, depending on the size of the 6 photodiodes.




FD 3113

3.1 x 1.3 mm

FD 2712

2.7 x 1.2 mm

FD 2311

2.3 x 1.1 mm

FD 2309

2.3 x 0.9 mm


  • High responsitivity
  • Low capacitance
  • Suitable for SMT
  • High reliability
  • Peak wavelength at 830 nm
Lead time up to: 10 working days