Photodiode Array PA1001

Photodiode Array PA1001

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The photosensor consists of 6-chip photodiodes produced in planar technology. The photodiodes are passivated with silicon-nitride which acts as an antireflective layer. They are then bonded to the PCB and protected with transparent epoxy glue. The Array can be used in photovoltaic or photoconductive mode.

Features

  • High responsitivity
  • Low capacitance
  • Suitable for SMT
  • High reliability
  • Peak wavelength at 830 nm